溅射靶材
上海美国ATT中国新材料科技有限公司专注于物理气相沉积（PVD）用溅射靶材和蒸镀材料的研发、生产、销售和回收利用。 美国ATT中国用于显示器、光伏、半导体、光学、LED、数据存储和玻璃应用的高纯度金属、复杂金属合金、贵金属和陶瓷的产品范围是无与伦比的。 根据材料的不同，可提供多种几何形状，包括但不限于：铸锭、丸粒、粉末、靶材（平面和旋转）、圆盘、片剂和颗粒。
产品代码 : ST-Cu-5N-Cu
Copper sputtering target has the same properties as metal copper. Copper is a chemical element originated from the Old English name coper in turn derived from the Latin ‘Cyprium aes’, meaning a metal from Cyprus. It was early used in 9000 BC and discovered by people from the Middle East. “Cu” is the canonical chemical symbol of copper.
产品代码 : ST-Nb-5N-Cu
Niobium sputtering target shares properties with its source material. Niobium is a silver-colored metal that is generally found in conjunction with tantalum, the two elements being separated by fractional crystallization of their respective fluoro-complexes. It has an abundance of 20 ppm in the earth’s crust.
产品代码 : ST-ZnO-5N-Cu
Zinc oxide sputtering target from ATT is an oxide sputtering material with the formula ZnO. Zinc is a chemical element that originated from the German, ‘zinc’, which may, in turn, be derived from the Persian word ‘sing’, meaning stone. It was early used before 1000 BC and discovered by Indian metallurgists.
产品代码 : ST-Cr2O3-5N-Cu
Chromium oxide sputtering target from ATT is an oxide sputtering material with the formula Cr2O3. Chromium is a chemical element that originated from the Greek ‘chroma’, meaning color. It was early used before 1 AD and discovered by Terracotta Army. “Cr” is the canonical chemical symbol of chromium.
产品代码 : ST-SiC-5N-Cu
Silicon Carbide sputtering target from ATT is a carbide ceramic sputtering material with the formula SiC. Silicon is a chemical element that originated from the Latin ‘silex’ or ‘silicis’, meaning flint. It was first mentioned in 1824 and observed by J. Berzelius.
产品代码 : ST-Si3N4-5N-Cu
Silicon nitride sputtering target is a type of nitride ceramic sputtering target. Si3N4 is a high-melting-point ceramic material that is extremely hard and relatively chemically inert. Si3N4 is prepared by heating powdered silicon between 1300 °C and 1400 °C in an atmosphere of nitrogen.
